JPH0521353B2 - - Google Patents

Info

Publication number
JPH0521353B2
JPH0521353B2 JP60260871A JP26087185A JPH0521353B2 JP H0521353 B2 JPH0521353 B2 JP H0521353B2 JP 60260871 A JP60260871 A JP 60260871A JP 26087185 A JP26087185 A JP 26087185A JP H0521353 B2 JPH0521353 B2 JP H0521353B2
Authority
JP
Japan
Prior art keywords
radiation
semiconductor
semiconductor substrate
layer
detection device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60260871A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62120086A (ja
Inventor
Morio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP60260871A priority Critical patent/JPS62120086A/ja
Publication of JPS62120086A publication Critical patent/JPS62120086A/ja
Publication of JPH0521353B2 publication Critical patent/JPH0521353B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
JP60260871A 1985-11-20 1985-11-20 放射線検出装置 Granted JPS62120086A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60260871A JPS62120086A (ja) 1985-11-20 1985-11-20 放射線検出装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60260871A JPS62120086A (ja) 1985-11-20 1985-11-20 放射線検出装置

Publications (2)

Publication Number Publication Date
JPS62120086A JPS62120086A (ja) 1987-06-01
JPH0521353B2 true JPH0521353B2 (en]) 1993-03-24

Family

ID=17353907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60260871A Granted JPS62120086A (ja) 1985-11-20 1985-11-20 放射線検出装置

Country Status (1)

Country Link
JP (1) JPS62120086A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7728301B2 (en) 2008-03-25 2010-06-01 Kabushiki Kaisha Toshiba X-ray detector

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9415584D0 (en) * 1994-08-02 1994-09-21 Imperial College Photo detector
EP3730973A4 (en) * 2018-09-25 2021-09-29 JX Nippon Mining & Metals Corporation RADIATION DETECTION ELEMENT AND RADIATION DETECTION ELEMENT PRODUCTION METHOD

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57125551U (en]) * 1981-01-30 1982-08-05
JPS57130483A (en) * 1981-02-05 1982-08-12 Semiconductor Energy Lab Co Ltd Mis type photoelectric transducer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7728301B2 (en) 2008-03-25 2010-06-01 Kabushiki Kaisha Toshiba X-ray detector

Also Published As

Publication number Publication date
JPS62120086A (ja) 1987-06-01

Similar Documents

Publication Publication Date Title
JPH027417B2 (en])
JPH04395B2 (en])
JP4653336B2 (ja) エネルギー線検出器及び装置
JP4522531B2 (ja) 半導体エネルギー検出素子
JPH0799782B2 (ja) 半導体光検出装置
US5047622A (en) Long wavelength infrared detector with heterojunction
JP2854550B2 (ja) 半導体粒子検出器およびその製造方法
US3939555A (en) Strip type radiation detector and method of making same
JP4571267B2 (ja) 放射線検出器
JPH0521353B2 (en])
US4524374A (en) Device for detecting infrared rays
JPH0446471B2 (en])
JPH0527997B2 (en])
US4060822A (en) Strip type radiation detector and method of making same
JPS6035834B2 (ja) 輻射線検出用半導体装置
JPS603792B2 (ja) マルチチヤネル型半導体放射線検出器
JPH01138486A (ja) 多チャンネル型半導体放射線検出器
JPS61231776A (ja) 光検知半導体装置
JPH0644618B2 (ja) 半導体受光装置
JPS6328076A (ja) 半導体放射線検出器
JP4197775B2 (ja) 半導体位置検出器
JP2676814B2 (ja) マルチ型受光素子
US11398572B2 (en) Semiconductor wafer manufacturing method, method of manufacturing semiconductor energy beam detecting element, and semiconductor wafer
JPS5819807Y2 (ja) 反射電子検出器
JPH0644640B2 (ja) 入射位置検出用半導体装置